CS12N60A8H mosfet equivalent, silicon n-channel power mosfet.
l Fast Switching l Low ON Resistance(Rdson≤0.65Ω) l Low Gate Charge (Typical Data:46nC) l Low Reverse transfer capacitances(Typical:23pF) l 100% Single Pulse avalanche e.
Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
VDSS
ID
.
CS12N60 A8H, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar
Technology which reduce the conduction loss, improve
switching performance and enhance the avalanche energy. The
transistor can be used in various pow.
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